01722nas a2200217   4500008004100000022001400041245014700055210006900202300001100271520098900282653000801271653000701279100002301286700001801309700001901327700001901346700002901365700001901394700001901413856007201432       2026                        eng d  a0169-433200aOxidation resistance of organosilicon layered nanostructures synthesized by nonthermal plasma and plasma silica as a source of oxidizing agent0 aOxidation resistance of organosilicon layered nanostructures syn  a1649723 a<p>Plasma polymer (1.2 g cm−3), compact silicon carbide (2.1 g cm−3) and plasma silica (2.2 g cm−3) were synthesized from pure tetravinylsilane vapor or its mixture with argon or oxygen by plasma-enhanced chemical vapor deposition. These materials in the form of nanolayers were combined into layered nanostructures deposited on silicon wafers. XPS depth profiling was used to analyze the chemical depth profiles across the layered nanostructures. The oxidation resistance of highly cross-linked silicon carbide and plasma silica was confirmed after 18 months of storage. However, the plasma polymer with low oxidation resistance must be protected by a 5-nm thick compact silicon carbide barrier to prevent its oxidation. Plasma silica was identified as the source of oxidizing agent for the adjacent plasma polymer in the silica/polymer nanostructure protected by a barrier against the surrounding environment. Oxygen penetrated the polymer by 37 nm in two years.</p>10aAIF10aMF1 aBránecký, Martin1 aJiricek, Petr1 aHoudkova, Jana1 aOlivova, Lucie1 aAboualigaledari, Naghmeh1 aPlichta, Tomas1 aCech, Vladimir  uhttps://www.sciencedirect.com/science/article/pii/S0169433225026881