EBL for Nanotechnologies

• e-beam pattern generator Tesla BS600 developed by ISI in 1977-1987;
  continuously modernized until now;
• procedures for adjusting the pattern generator;
• technological and lithographic marks; testing patterns;
• apertures forming a rectangular beam;
• current density distribution in the beam;
• electron emitters.

E-Beam Lithography Group (EBL)

Research Areas:

• EBL for Nanotechnologies
• Microlithography Techniques
• Nanolitography
• Industrial Holography using E-Beam Lithography

Offered Technologies:

• Optical Diffractive Structures
• E-Beam Lithography Technology

E-beam pattern generator Tesla BS600

• E-beam pattern generator with rectangularly shaped beam and electron energy of 15 keV.
• Recording resolution (beam positioning) of 50 nm.
• Beam size adjustable from 50 to 6300 nm (standard mode); from 17 to 2100 nm (TZ mode).
• Exposure field 3 × 3 mm² (max).
• Proximity effect corection algorithmes.